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IJSDR
INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15

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Impact factor: 8.15

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Paper Title: Leakage power reduction techniques in CMOS VLSI circuits - A Survey
Authors Name: D. Vijayalakshmi , Dr. P. C. Kishore Raja
Unique Id: IJSDR1605133
Published In: Volume 1 Issue 5, May-2016
Abstract: This paper covers the various techniques used to reduce Leakage power in CMOS circuits. The CMOS has been the leading technology in today’s world of mobile communication due to its low power consumption. Reduction of leakage power in CMOS has been the research interest for the last couple of years. In CMOS integrated circuit design there is an important trade-off between technology scaling and static power consumption. In today’s CMOS technology the leakage power consumption plays a significant role. As we approach nano-scale design the total chip power consumption becomes dependent on leakage power. Increasing the battery life in mobile wireless communication and mobile computing and similar other applications is the topic of research now-a days... Further, since the leakage of battery exists even when devices are in idle state makes leakage power loss most critical in CMOS VLSI circuits. Many techniques have been evolved to tackle the problem and it is still in progress. This paper also focuses on a new technique called scan chain technique.
Keywords: CMOS, Leakage power, VLSI circuits, multimedia applications, Static power, Nano Scale, LSSR, DUT
Cite Article: "Leakage power reduction techniques in CMOS VLSI circuits - A Survey", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.1, Issue 5, page no.717 - 722, May-2016, Available :http://www.ijsdr.org/papers/IJSDR1605133.pdf
Downloads: 000337074
Publication Details: Published Paper ID: IJSDR1605133
Registration ID:160414
Published In: Volume 1 Issue 5, May-2016
DOI (Digital Object Identifier):
Page No: 717 - 722
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631

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