INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
Effect of Tin Impurity on PbS Thin Film Grown By CBD Method
Authors Name:
Dr. Pramod Kumar
Unique Id:
IJSDR2208048
Published In:
Volume 7 Issue 8, August-2022
Abstract:
Polycrystalline alloy semiconductor as an emerging as an important material for electric and optoelectronics devices. It is an interesting narrow band gap compound semiconductor, which is used in photo-detectors and photo-resistors. Polycrystalline alloy semiconductors PbSnS thin film is deposited on glass substrate by chemical bath deposition method. We have take lead acetate and Thiourea in the presence of an alkaline medium NaOH and added SnCl2 as an impurity. The electrical properties of the grown film were characterized. Hall coefficient, Hall mobility, carrier concentration, and effect of energy band gap with different concentrations were measured.
Keywords:
Hall coefficient, Hall mobility, Carrier concentration, Chemical bath deposition,
Cite Article:
"Effect of Tin Impurity on PbS Thin Film Grown By CBD Method", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.7, Issue 8, page no.351 - 354, August-2022, Available :http://www.ijsdr.org/papers/IJSDR2208048.pdf
Downloads:
000337074
Publication Details:
Published Paper ID: IJSDR2208048
Registration ID:201208
Published In: Volume 7 Issue 8, August-2022
DOI (Digital Object Identifier):
Page No: 351 - 354
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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