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INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15

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Paper Title:	A review of surface potential of short channel MOSFETs in subthreshold regime
Authors Name:	Swapnadip De , Angsuman Sarkar , Srijan Das
Unique Id:	IJSDR2308030
Published In:	Volume 8 Issue 8, August-2023
Abstract:	In this paper an analytical models of subthreshold surface potential for channel engineered and gate engineered MOSFETs are studied. The models are compared with simulation results from 2D DESSIS. It is seen that the results of the existing models tally with those from 2D DESSIS.
Keywords:	Surface potential, subthreshold, Gauss’s law, channel engineering, gate engineering
Cite Article:	"A review of surface potential of short channel MOSFETs in subthreshold regime ", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.8, Issue 8, page no.204 - 217, August-2023, Available :http://www.ijsdr.org/papers/IJSDR2308030.pdf
Downloads:	000338720
Publication Details:	Published Paper ID: IJSDR2308030 Registration ID:208104 Published In: Volume 8 Issue 8, August-2023 DOI (Digital Object Identifier): Page No: 204 - 217 Publisher: IJSDR \| www.ijsdr.org ISSN Number: 2455-2631

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