INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
Nirmala S O
, Leela G H , Aniket Vilas Vakude , Dharani A S
Unique Id:
IJSDR2310030
Published In:
Volume 8 Issue 10, October-2023
Abstract:
This paper presents a comprehensive analysis of three static random access memory (SRAM) cell designs: 6T, 9T, and 10T. The purpose of the analysis is to determine the most suitable SRAM cell for attaining low power consumption and high-speed performance. Each cell design is evaluated based on various parameters, including write access time and power dissipation. The results obtained from the analysis provide valuable insights into the trade-offs between power consumption and performance, enabling the selection of an optimal SRAM cell for specific design requirements.
Keywords:
SRAM, 6T, 9T, 10T, low power consumption, high-speed performance
Cite Article:
"Design of SRAM Memories with Different Topologies", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.8, Issue 10, page no.168 - 171, October-2023, Available :http://www.ijsdr.org/papers/IJSDR2310030.pdf
Downloads:
000338720
Publication Details:
Published Paper ID: IJSDR2310030
Registration ID:208756
Published In: Volume 8 Issue 10, October-2023
DOI (Digital Object Identifier): https://doi.org/10.5281/zenodo.10446592
Page No: 168 - 171
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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