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IJSDR
INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH
International Peer Reviewed & Refereed Journals, Open Access Journal
ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15

Issue: May 2024

Volume 9 | Issue 5

Impact factor: 8.15

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Paper Title: Spectroscopic Study of Oxygen Agglomeration In Step-annealed Czochralski Silicon
Authors Name: Dr. Ritu Agarwal
Unique Id: IJSDR2403041
Published In: Volume 9 Issue 3, March-2024
Abstract: Czochralski-grown silicon being the chief material for the fabrication of electronic devices, needs to be studied thoroughly. During the growth process of CZ Si, oxygen gets trapped at interstitial sites. Here in this study, variation in concentration of interstitial oxygen with annealing time is studied as a result of pre-annealing at moderate temperature 480°C in carbon-rich boron-doped (p-type) CZ-silicon. Correlation of this concentration with the generation and annihilation of thermal donors (TDs) and new donors (NDs) has been studied using Hall effect and FTIR studies. Oxygen concentration is determined by evaluating absorption coefficient of oxygen from the IR spectrum of the specimens with successive annealing in steps of 10 hrs. It is seen that more and more oxygen gets precipitated with the increase in annealing time due to the formation of TDs and NDs. It is also seen that the concentration of interstitial oxygen after annealing is higher than the initial concentration. An attempt has been made to explain the reasons behind this.
Keywords: CZ- Silicon, Thermal donor, New donor, Thermal acceptor, Interstitial Oxygen, Pre-annealing.
Cite Article: "Spectroscopic Study of Oxygen Agglomeration In Step-annealed Czochralski Silicon", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.9, Issue 3, page no.269 - 273, March-2024, Available :http://www.ijsdr.org/papers/IJSDR2403041.pdf
Downloads: 000337363
Publication Details: Published Paper ID: IJSDR2403041
Registration ID:210351
Published In: Volume 9 Issue 3, March-2024
DOI (Digital Object Identifier):
Page No: 269 - 273
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631

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