INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
SRAM Architecture Design of Low Power and High Speed Using Stack ONOFIC Technology
Authors Name:
MADAKA JAYANTHI
, T RAVI BABU
Unique Id:
IJSDR2007104
Published In:
Volume 5 Issue 7, July-2020
Abstract:
For many VLSI chips, static random access memory (SRAM) has become an important part due to its large storage capacity and short access time. Suitable memory design with low power consumption is one of the most difficult problems with SRAM architecture. As technology nodes reduce, leakage power consumption has become a major problem. There are several power gating schemes in the literature, including sleep technique, stack technique, sleepy stack technique, sleepy keeper technique, lector technique, foot switch technique, double switch technique and sleepy keeper leakage control transistor technique (SK-LCT) for leakage power reduction. In this paper a novel power gating technique namely Stack ONOFIC technique is proposed for a low power SRAM architecture design.The SRAM architecture has two main components: SRAM cells and sense amplifiers. The proposed Stack ONOFIC technology applies to both SRAM cells and sense amplifiers and is used in the new high-speed and low-power SRAM architecture designs. Simulated with the 45nm technology of the Tanner EDA tool and the results obtained show a significant improvement in leakage energy consumption and speed.
"SRAM Architecture Design of Low Power and High Speed Using Stack ONOFIC Technology ", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.5, Issue 7, page no.725 - 732, July-2020, Available :http://www.ijsdr.org/papers/IJSDR2007104.pdf
Downloads:
000337353
Publication Details:
Published Paper ID: IJSDR2007104
Registration ID:192211
Published In: Volume 5 Issue 7, July-2020
DOI (Digital Object Identifier):
Page No: 725 - 732
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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