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INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH
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ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
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Paper Title:	Design of Low Power RRAM Cell Using CNFET
Authors Name:	K. JEEVAN CHAITANYA , J. JAYA SREE
Unique Id:	IJSDR2103031
Published In:	Volume 6 Issue 3, March-2021
Abstract:	This Project presents a CNFET based novel RRAM cell using memristor as memory element. The proposed RRAM cell is designed in such a way that half-select issue is resolved. Simulation results of critical design metrics of the proposed RRAM cell and previous 2T2M RRAM cell are compared. The proposed RRAM cell achieves 6.13× lower read delay along with 33× lower hold power due to use of MTCMOS power reduction technique than 2T2M cell at nominal VDD. It is a half-select free non-volatile RRAM cell with faster read operation and it is also power efficient.
Keywords:	memristor; RRAM; non-volatile; CNFET; read delay; write delay
Cite Article:	"Design of Low Power RRAM Cell Using CNFET", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.6, Issue 3, page no.213 - 218, March-2021, Available :http://www.ijsdr.org/papers/IJSDR2103031.pdf
Downloads:	000337362
Publication Details:	Published Paper ID: IJSDR2103031 Registration ID:193030 Published In: Volume 6 Issue 3, March-2021 DOI (Digital Object Identifier): Page No: 213 - 218 Publisher: IJSDR \| www.ijsdr.org ISSN Number: 2455-2631

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