INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
With the help of X-ray diffraction (XRD), the films' structure and crystalline size are determined. The surface morphology of the films was investigated by using scanning electron microscopy (SEM). Energy dispersive X-ray analysis (EDAX) coupled with SEM was used to determine the elemental composition of the films. According to X-ray diffraction analyses, The films were multi-crystalline, showing an orthorhombic structure with the most pronounced grain alignment along the (111) and (112) axes. Studies using scanning electron microscopy demonstrate that tiny grains were combined to create a collection of larger sizes. The Debye-Scherrer formula estimated that the produced SnSe films had crystallite sizes of roughly 30 nm. According to EDAX analysis, the produced films were almost stoichiometric. SnSe thin Films are deposited using a chemical bath deposition method.
Keywords:
Semiconductor, Thin films, Tin Selenide, XRD, SEM, and EDAX.
Cite Article:
"Investigation on structural, optical, morphological, and electrical features of nanocrystalline SnSe thin films synthesized by low-cost method", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.8, Issue 9, page no.926 - 931, September-2023, Available :http://www.ijsdr.org/papers/IJSDR2309134.pdf
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000338719
Publication Details:
Published Paper ID: IJSDR2309134
Registration ID:208694
Published In: Volume 8 Issue 9, September-2023
DOI (Digital Object Identifier):
Page No: 926 - 931
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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