INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016
open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15
Effect of perovskite as an HTL on the enhancement of efficiency of CIGSSe photovoltaics device
Authors Name:
Rajeev Ranjan Kumar
Unique Id:
IJSDR2402083
Published In:
Volume 9 Issue 2, February-2024
Abstract:
In this paper, the performance of the basic (ZnMgO: Al/ZnMgO/CIGSSe) photovoltaic device has been improved by using the novel perovskite as a hole transport layer (HTL) material. At first, the CdS-free basic experimental photovoltaic device with an efficiency of 20% was simulated, and the photovoltaic results were confirmed by entering the experimental optoelectronics data into the AFORS-HET simulation tool. Further, they optimised the thickness and doping density of the basic photovoltaic device's Front , buffer, and absorber layers. After optimization, efficiency (η), VOC, FF and JSC have been enhanced, but external quantum efficiency (EQE) is still lesser than basic photovoltaic devices due to the absence of HTL material. Furthermore, a new structure is proposed using perovskite as an HTL material and is added between the CIGSSe/Mo back ohmic metal layers in the optimised photovoltaic device. Therefore, the proposed photovoltaic device absorbs the bulk of blue sunlight, instantly reducing the recombination losses and enhancing the efficiency (27.96%) and EQE.
Keywords:
Thin-film solar cells, perovskite, External quantum efficiency, hole transport layer, Mg-doped ZnO
Cite Article:
"Effect of perovskite as an HTL on the enhancement of efficiency of CIGSSe photovoltaics device", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.9, Issue 2, page no.532 - 542, February-2024, Available :http://www.ijsdr.org/papers/IJSDR2402083.pdf
Downloads:
000338719
Publication Details:
Published Paper ID: IJSDR2402083
Registration ID:209664
Published In: Volume 9 Issue 2, February-2024
DOI (Digital Object Identifier):
Page No: 532 - 542
Publisher: IJSDR | www.ijsdr.org
ISSN Number: 2455-2631
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