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INTERNATIONAL JOURNAL OF SCIENTIFIC DEVELOPMENT AND RESEARCH International Peer Reviewed & Refereed Journals, Open Access Journal ISSN Approved Journal No: 2455-2631 | Impact factor: 8.15 | ESTD Year: 2016 open access , Peer-reviewed, and Refereed Journals, Impact factor 8.15 |
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| Paper Title: | Design of SRAM Memories with Different Topologies |
| Authors Name: | Nirmala S O , Leela G H , Aniket Vilas Vakude , Dharani A S |
| Unique Id: | IJSDR2310030 |
| Published In: | Volume 8 Issue 10, October-2023 |
| Abstract: | This paper presents a comprehensive analysis of three static random access memory (SRAM) cell designs: 6T, 9T, and 10T. The purpose of the analysis is to determine the most suitable SRAM cell for attaining low power consumption and high-speed performance. Each cell design is evaluated based on various parameters, including write access time and power dissipation. The results obtained from the analysis provide valuable insights into the trade-offs between power consumption and performance, enabling the selection of an optimal SRAM cell for specific design requirements. |
| Keywords: | SRAM, 6T, 9T, 10T, low power consumption, high-speed performance |
| Cite Article: | "Design of SRAM Memories with Different Topologies", International Journal of Science & Engineering Development Research (www.ijsdr.org), ISSN:2455-2631, Vol.8, Issue 10, page no.168 - 171, October-2023, Available :http://www.ijsdr.org/papers/IJSDR2310030.pdf |
| Downloads: | 000338721 |
| Publication Details: | Published Paper ID: IJSDR2310030 Registration ID:208756 Published In: Volume 8 Issue 10, October-2023 DOI (Digital Object Identifier): https://doi.org/10.5281/zenodo.10446592 Page No: 168 - 171 Publisher: IJSDR | www.ijsdr.org ISSN Number: 2455-2631 |
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